BSZ120P03NS3GATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSZ120P03NS3GATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ120P03NS3GATMA1
BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon
BSZ120P03NS3GATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSZ120P03NS3GATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.12 | $0.41 |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) | -30 V | β |
| Continuous Drain Current (TA=25C) | -11 A | β |
| Continuous Drain Current (TC=25C) | -40 A | β |
| Power Dissipation (TA=25C) | 2.1 W | β |
| Power Dissipation (TC=25C) | 52 W | β |
| On-Resistance RDS(on) max @ VGS=-10V | 12 mOhm | β |
| On-Resistance RDS(on) max @ VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage VGS(th) typ | -1.7 V | β |
| Technology | OptiMOS P3 | OptiMOS 3 (trench MOSFET) |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |