CGD65B200S2 vs CGD65B240SH2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng CGD65B200S2 sa pamamagitan ng Cambridge GaN Devices at CGD65B240SH2 sa pamamagitan ng Cambridge GaN Devices. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Cambridge GaN Devices
CGD65B200S2 - 650V 200mΩ ICeGaN™ GaN HEMT | Cambridge GaN Devices
CGD65B200S2 ✓ NakahandaCambridge GaN Devices
CGD65B240SH2 - 650V/55mΩ GaN HEMT ICeGaN® Transistor | CGD
CGD65B240SH2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | CGD65B200S2 | CGD65B240SH2 |
|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorya | Transistors | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Part Family | ICeGaN™ | — |
| Device Type | Enhancement-mode GaN-on-Si HEMT | — |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Typical R_DS(on) | 200 mΩ | — |
| Gate Drive (V_GS) | 12 V (typical) | — |
| Continuous Drain Current (I_D) | [DATA_NEEDED: continuous drain current] | 7 A (per DigiKey listing) |
| Packhaging | 8-PowerVDFN (DFN5x6) | 8-DFN (5x6 mm) surface mount with thermal pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Mode | Enhancement mode (normally-off) | Enhancement mode (normally-off) |
| Gate Technology | ICeGaN™ (gate input circuit on chip) | ICeGaN® (gate-injection, 0-20 V drive) |
| Material | GaN-on-Silicon | — |
| Polarity | N-Channel | — |
| Reel Variant | CGD65B200S2-T13 (Tape & Reel) | — |
| Tindminan RoHS | Compliant | — |
| Uri ng Transistor | — | N-Channel GaN HEMT, enhancement mode |
| Drain-Source Voltage (V_DS,max) | — | 650 V |
| On-Resistance (R_DS(on)) | — | 55 mΩ (typical, per datasheet title block) |
| Current Sense Pin | — | Yes (integrated, shunt-free) |
| NL³ Circuit | — | Yes (integrated non-linear loss-less circuit) |
| Channel Type | — | N-Channel |
| Process Technology | — | GaN-on-silicon (GaN-on-Si) |
| Switching Frequency (typical app) | — | 200 kHz - 500 kHz (per CGD reference designs) |
| Typical Application | — | 65 W quasi-resonant flyback, PFC, SMPS |
| Compliance | — | [DATA_NEEDED: specific RoHS/REACH documentation] |