CY14B101KA-ZS45XI vs CY14B101KA-ZS25XI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng CY14B101KA-ZS45XI sa pamamagitan ng Infineon at CY14B101KA-ZS25XI sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | CY14B101KA-ZS45XI | CY14B101KA-ZS25XI |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | nvSRAM (nonvolatile SRAM) with RTC | nvSRAM (Non-Volatile SRAM) with RTC |
| Density | 1 Mbit (1049 kbits) | 1 Mbit (1024 kbit) |
| Organisasyon | 128K x 8 | 128K x 8 |
| Access Time | 45 ns | 25 ns |
| Volte ng Pagbibigay | 3 V (2.7 V to 3.6 V range class) | 2.7 V to 3.6 V (nominal 3 V) |
| Interface | Parallel (SRAM-compatible) | Parallel |
| Data Retention | 20 years | — |
| Real-Time Clock | Yes, integrated with backup | — |
| Technology | CMOS with QuantumTrap nonvolatile elements | QuantumTrap non-volatile elements |
| Packhaging | 44-pin TSOP II | 44-TSOP II |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40C to +85C (industrial, XI suffix) | -40C to +85C (industrial) |
| Tindminan RoHS | Compliant | RoHS compliant (per package marking ZS25XI) |
| Package Standard | MO-119, SOIC-family TSOP II outline | — |
| Endurance (SRAM reads/writes) | Unlimited | — |
| Nonvolatile Store Endurance | [DATA_NEEDED: store endurance cycles] | — |
| Active Supply Current | [DATA_NEEDED: ICC active] | — |
| Standby Current | [DATA_NEEDED: ISB standby] | — |
| Store Cycles | — | [DATA_NEEDED: store cycle endurance] |
| SRAM Read/Write Endurance | — | Unlimited |
| RTC | — | Yes, with alarm and external 32.768 kHz crystal |
| Automatic STORE | — | Yes, on power fail via VCAP |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |