EP2A40FB724C8 vs EP2A40B724C7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2A40FB724C8 sa pamamagitan ng Intel at EP2A40B724C7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2A40FB724C8 | EP2A40B724C7 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Family | APEX II | APEX II |
| Device Logic Elements | 38,400 | — |
| Typical Gates | 40,000 | — |
| Total RAM Bits | 655,360 | — |
| User I/O Pins | 540 | — |
| Core Voltage | 1.425 V to 1.575 V | — |
| Packhaging | 724-BGA (FCBGA), 35 mm x 35 mm | 724-ball FCBGA (FineLine BGA), 35 mm x 35 mm |
| Speed Grade | -8 | — |
| Temperature na Operasyon | Commercial (0 C to +85 C) per suffix | 0 °C to +85 °C (commercial) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Architecture | MultiCore (LUT + Embedded System Blocks) | — |
| Embedded System Blocks | Configurable dual-port SRAM / CAM / FIFO | — |
| Configuration Mode | JTAG / Passive Serial / Passive Parallel | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Non-compliant (lead-bearing FCBGA) |
| Process Technology | CMOS, SRAM-based | 0.15 µm CMOS, up to 8 metal layers, all-layer copper |
| Logic Elements / Cells | — | 38,400 |
| Total System Gates | — | 1,500,000 |
| Embedded RAM Bits | — | 655,360 |
| Maximum User I/O | — | 540 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (typ. 1.5 V) |
| Maximum Internal Frequency | — | 562 MHz |
| PLLs | — | 4 |
| I/O Standards Supported | — | LVTTL, LVCMOS, 1.5 V/1.8 V/2.5 V/3.3 V, SSTL, HSTL, PCI, LVDS, LVPECL, PCML, HyperTransport, True-LVDS (1 Gbps) |
| Configuration Method | — | JTAG (IEEE 1149.1), Passive Serial, Passive Parallel, Active Serial via EPC configuration devices |
| MultiVolt I/O Support | — | 1.5 V, 1.8 V, 2.5 V, 3.3 V |
| DDR Memory Support | — | Yes (via ESB / I/O circuitry) |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |