EP2S180F1020C3 vs EP2S180F1020C5N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2S180F1020C3 sa pamamagitan ng Intel at EP2S180F1020C5N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2S180F1020C3 | EP2S180F1020C5N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Series | Stratix II | — |
| Device Family | EP2S180 | — |
| Equivalent Logic Elements (LEs) | 179,400 | — |
| Logic Array Blocks (LABs) | 8,970 | — |
| Embedded Memory (RAM bits) | 9,383,040 | — |
| Maximum User I/Os | 742 | — |
| Packhaging | 1020-ball FBGA (flip-chip BGA) | 1020-BBGA, FCBGA (33x33 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Node | 90 nm, all-layer copper SRAM | — |
| Core Voltage | 1.2 V | 1.15 V to 1.25 V (typ. 1.2 V) |
| Speed Grade | C3 | C5 (commercial) |
| Temperature na Operasyon | Commercial (0C to +85C) | 0C to +85C (commercial) |
| DSP Blocks | Dedicated high-speed multipliers | — |
| Memory Interfaces Supported | DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| I/O Standards | LVDS, LVPECL, SSTL, HSTL | — |
| Configuration Method | SRAM-based (volatile, requires boot device) | — |
| Development Toolchain | Quartus II / Quartus Prime | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (N suffix = lead-free) |
| Family | — | Stratix II |
| Logic Elements | — | 179400 |
| LABs/CLBs | — | 8970 |
| Total RAM Bits | — | 9383040 |
| User I/O | — | 742 |
| Supplier Device Package | — | 1020-FBGA (33x33) |
| Process Technology | — | 90 nm |
| Number of Terminals | — | 1020 (BGA ball grid) |
| Lead Free | — | Yes (Pb-free terminal finish) |
| Configuration | — | SRAM-based, JTAG / Active Serial |