EP2S180F1020C3 vs EP2S180F1020I4 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2S180F1020C3 sa pamamagitan ng Intel at EP2S180F1020I4 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2S180F1020C3 | EP2S180F1020I4 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Series | Stratix II | Stratix II |
| Device Family | EP2S180 | — |
| Equivalent Logic Elements (LEs) | 179,400 | — |
| Logic Array Blocks (LABs) | 8,970 | — |
| Embedded Memory (RAM bits) | 9,383,040 | — |
| Maximum User I/Os | 742 | — |
| Packhaging | 1020-ball FBGA (flip-chip BGA) | 1020-BBGA, FC-FBGA (Flip-Chip FineLine BGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Process Node | 90 nm, all-layer copper SRAM | — |
| Core Voltage | 1.2 V | — |
| Speed Grade | C3 | — |
| Temperature na Operasyon | Commercial (0C to +85C) | -40C to +100C (Industrial grade, "I4" suffix) |
| DSP Blocks | Dedicated high-speed multipliers | — |
| Memory Interfaces Supported | DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| I/O Standards | LVDS, LVPECL, SSTL, HSTL | — |
| Configuration Method | SRAM-based (volatile, requires boot device) | Passive serial, Active serial, Fast passive parallel, JTAG |
| Development Toolchain | Quartus II / Quartus Prime | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Family | — | Stratix II (EP2S180) |
| Logic Elements | — | 179,400 |
| Number of LABs/CLBs | — | 8,970 |
| Total RAM Bits | — | 9,383,040 (8,979,840 per alternate sources) |
| Number of I/O | — | 742 |
| Number of DSP Blocks | — | [DATA_NEEDED: DSP block count per Stratix II EP2S180 datasheet - typically 12] |
| Number of PLLs | — | [DATA_NEEDED: PLL count per EP2S180 datasheet] |
| Core Voltage (VCCINT) | — | 1.2 V |
| Process Technology | — | 90 nm CMOS |
| Maximum Operating Frequency | — | 711.24 MHz |
| Level ng MSL | — | [DATA_NEEDED: MSL rating from Altera packaging spec] |
| Lead-Free | — | Yes |
| Configuration Memory Type | — | SRAM (volatile; requires external configuration device) |
| Supplier Device Package | — | 1020-FBGA |
| Base Part Number | — | EP2S180 |