EP3C10F256C6 vs EP3C10F256C6N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C10F256C6 sa pamamagitan ng Intel at EP3C10F256C6N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C10F256C6 | EP3C10F256C6N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone III | Cyclone III |
| Logic Elements (LE) | 10,320 | 10,320 |
| Total Memory Bits | 423,936 bits | 423,936 bits |
| Embedded 18x18 Multipliers | 23 | 46 |
| PLLs | 2 | 2 |
| Maximum User I/Os | 182 | 182 |
| Packhaging | 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch) | 256-ball FineLine BGA (FBGA-256) |
| Uri ng Pagpapasok | Surface Mount (BGA) | — |
| Core Voltage (VCCINT) | 1.15 V to 1.25 V (typ. 1.2 V) | 1.2 V |
| I/O Voltage (VCCIO) | 1.2 V to 3.3 V (bank-dependent) | — |
| Process Technology | 60 nm low-power CMOS | — |
| Configuration Memory | SRAM-based (external EPCS flash required) | — |
| Temperature na Operasyon | -40 C to +125 C (industrial, suffix 'C') | — |
| Speed Grade | 6 | — |
| Tindminan RoHS | Compliant (lead-free FBGA) | Compliant (lead-free N suffix) |
| Level ng MSL | 3 (168 hours) | — |
| Embedded Memory (M9K blocks) | — | 46 blocks x 9 Kbit |
| Global Clock Networks | — | 20 |
| Process Node | — | 65 nm low power (TSMC) |
| Configuration Modes | — | JTAG, Active Serial (AS), Active Parallel (AP) |
| I/O Standards | — | LVTTL, LVCMOS, SSTL, LVDS, RSDS, mini-LVDS, PPDS |
| Operating Temperature (Commercial) | — | 0C to +85C (C6 speed grade, N = lead-free) |
| Programming Tool | — | Intel Quartus II (Cyclone III device support) |