EP3SE110F1152C3N vs EP3SE110F1152C4 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE110F1152C3N sa pamamagitan ng Intel at EP3SE110F1152C4 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3SE110F1152C3N EP3SE110F1152C4
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Huling Pagbili Huling Pagbili
Family Stratix III E Stratix III E
Series Stratix III —
Logic Elements (LE) 107,500 —
Logic Array Blocks (LABs) 4,300 [DATA_NEEDED: LAB count]
Total RAM Bits 8,936,448 —
User I/Os 744 —
Operating Frequency (max) 500 MHz —
Core Supply Voltage 1.1 V nominal —
I/O Supply Voltage [DATA_NEEDED: I/O supply range] —
Process Technology 65 nm TSMC 65 nm
Package Type FC-FBGA-1152 (flip-chip BGA) 1152-ball FCBGA (Flip-Chip BGA)
Temperature na Operasyon 0 °C to 85 °C (commercial) —
Speed Grade C3 —
Uri ng Pagpapasok Surface Mount —
Style ng Pagpapasok SMD/SMT (Tray) —
DSP Blocks Yes (embedded multipliers) [DATA_NEEDED: 18x18 multiplier count]
Uri ng Memory M9K and M144K block RAM —
External Memory Support DDR/DDR2/DDR3 with read/write leveling —
Boundary Scan IEEE 1149.1 (JTAG) —
RoHS [DATA_NEEDED: RoHS status] —
Lead-Free Yes (per Altera/Intel datasheet family convention) —
Logic Elements — 107,500
Embedded Memory — 8,936,448 bits
Maximum User I/Os — 744
Core Voltage — 1.1 V
Maximum Performance — 450 MHz
Operating Temperature Grade — Commercial (C4)
Configuration Memory — SRAM-based (volatile)
On-chip Termination — Dynamic, programmable
I/O Standards Supported — LVDS, LVTTL, LVCMOS, HSTL, SSTL
Tindminan RoHS — Compliant

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita