EP3SE260F1517C3N vs EP3SE260F1517C3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517C3N sa pamamagitan ng Intel at EP3SE260F1517C3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517C3N | EP3SE260F1517C3 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | Aktibo |
| Family | Stratix III E | — |
| Logic Elements | 254,400 | 255,000 |
| Embedded Memory | 16,672,768 bits (16.7 Mbits) | 16,672,768 bits (16.67 Mbit) |
| User I/Os | 976 | 976 |
| DSP Blocks (18x18 Multipliers) | 816 | — |
| M9K Memory Blocks | 1,040 | — |
| Maximum Transceiver Data Rate | 600 Mbps | — |
| PLLs | 4 | 12 |
| Global Clock Networks | 16 | — |
| Packhaging | 1517-BBGA (FCBGA) | 1517-BBGA, FCBGA (FineLine BGA) |
| Process Technology | 65 nm TSMC low-power CMOS | — |
| Speed Grade | C3 (commercial) | 3 |
| Temperature ng Junction na Operasyon | 0 C to +85 C (commercial) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Tindminan RoHS | Compliant | Compliant |
| External Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| Manufacturer | — | Intel (formerly Altera) |
| Series | — | Stratix III E |
| Logic Array Blocks (LABs) | — | 10,200 |
| DSP Blocks (18x18 multipliers) | — | 768 |
| Core Voltage | — | 0.9 V |
| Process Node | — | 65 nm (TSMC) |
| Package Pitch | — | 1.0 mm |
| Operating Temperature Grade | — | Commercial (C suffix) |
| Configuration | — | SRAM-based, requires external configuration device |