EP3SE260H780I4 vs EP3SE260H780C4N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780I4 sa pamamagitan ng Intel at EP3SE260H780C4N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3SE260H780I4 EP3SE260H780C4N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND NRND
Family Stratix III Enhanced (Stratix III E) Stratix III E (Enhanced)
Logic Elements 255,000 255,000
Logic Cells 255,000 —
Logic Array Blocks (LABs) 10,200 10,200
Adaptive Logic Modules (ALMs) approximately 203,200 —
Maximum User I/Os 488 —
Process Technology 65 nm CMOS —
Core Voltage 1.1 V 0.86 V to 1.15 V
Embedded RAM (total) approximately 14.4 Mbit (M9K/M144K blocks) —
DSP Blocks approximately 768 (18x18 multipliers) —
Maximum Operating Frequency up to 450 MHz core / 717 MHz per Partstack record —
Packhaging 780-ball FC-HFBGA (HBGA) 780-ball FCBGA (Flip Chip BGA)
Temperature na Operasyon -40C to +100C (industrial, 'I' grade) 0C to +85C (commercial)
Speed Grade 4 —
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount
Configuration Schemes JTAG, Passive Serial, Fast Passive Parallel, Active Serial —
Tindminan RoHS [DATA_NEEDED: RoHS compliance status] —
Total RAM Bits — 16,672,768
Embedded Memory — M9K and M144K blocks
User I/O Pins — 488
DSP Blocks (18x18 Multipliers) — 768
PLLs — 12
Process Node — 65 nm CMOS
Maximum Core Clock Frequency — 450 MHz
Level ng Sensitivity sa Asid ng Moisture (MSL) — 3 (168 hours)
Configuration Method — Serial/Parallel via Quartus II

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