EP4CE55F29I8LN vs EP4CE55F29I8N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE55F29I8LN sa pamamagitan ng Intel at EP4CE55F29I8N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CE55F29I8LN EP4CE55F29I8N
Brand Intel Altera
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone IV E —
Device Model EP4CE55 —
Logic Elements (LEs) 55,856 55,856
Logic Array Blocks (LABs) 3,135 —
Total Embedded Memory Bits 2,396,160 bits —
Embedded Memory (M9K blocks) 260 blocks —
18x18 Hardware Multipliers 374 —
PLLs 4 —
Maximum User I/O Pins 374 [DATA_NEEDED: maximum user I/O count for F29 package]
Core Voltage 1.2 V —
Process Technology 60 nm TSMC low-power 60 nm low-power CMOS
Packhaging 780-ball FBGA (F29) 780-ball FBGA (F29, 29x29 mm)
Ball Pitch 1.0 mm —
Temperature na Operasyon -40C to +85C (Industrial) -40C to +100C (Industrial grade, suffix I)
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Lead-Free / RoHS Yes (per OPN suffix N) —
Configuration Modes JTAG, AS, PS, FPP Active Serial (AS), Passive Serial (PS), JTAG, Fast Passive Parallel (FPP)
Supported I/O Standards LVTTL, LVCMOS, LVDS, SSTL, HSTL —
Series — Cyclone IV E
Embedded Memory (bits) — 2,396,160
Embedded 18x18 Multipliers — 374
General-Purpose PLLs — 4
Supply Voltage Core — 1.0 V (typical, VCCINT)
I/O Bank Supply Voltages — 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V
External Memory Interfaces — DDR, DDR2, SDR, QDRII, QDRII+ SRAM
Differential I/O Standards — LVDS, RSDS, mini-LVDS, LVPECL (receive)
Tindminan RoHS — Compliant

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