EP4CE6E22C6 vs EP4CE6E22C6N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE6E22C6 sa pamamagitan ng Intel at EP4CE6E22C6N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE6E22C6 | EP4CE6E22C6N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone IV E | Cyclone IV E |
| Device Logic Elements | 6,272 LE | — |
| Logic Array Blocks (LABs) | 392 LABs | [DATA_NEEDED: LAB count] |
| Total RAM Bits | 270 Kbit | — |
| Embedded 18x18 Multipliers | 15 | 15 |
| PLLs | 2 | 2 |
| Maximum User I/Os | 91 | 91 |
| Core Voltage | 1.2 V | — |
| Speed Grade | C6 | — |
| Temperature na Operasyon | 0 °C to +85 °C (Commercial) | -40 C to +85 C (industrial, C6 speed grade) |
| Package Type | 144-pin EQFP (Enhanced QFP, exposed pad) | — |
| Package Dimensions | 22 mm × 22 mm | — |
| Lead Pitch | 0.5 mm | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Technology | TSMC 60 nm low-k | 60 nm |
| Configuration Method | SRAM-based (volatile); JTAG, Active Serial, Passive Serial | — |
| Tindminan RoHS | Compliant | Lead-Free / Compliant |
| Device | — | EP4CE6 |
| Logic Elements (LEs) | — | 6,272 |
| Embedded Memory (M9K blocks) | — | [DATA_NEEDED: M9K block count] |
| Embedded Memory (Bits) | — | 270 Kbits |
| Global Clock Networks | — | 10 |
| I/O Banks | — | 4 |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V |
| Configuration Modes | — | JTAG, AS (Active Serial), PS (Passive Serial) |
| Packhaging | — | 144-pin EQFP (Plastic Enhanced QFP, 22 x 22 mm, 0.5 mm pitch) |
| Lead-Free | — | Yes |