EP4CE6F17C8L vs EP4CE10F17C8N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE6F17C8L sa pamamagitan ng Intel at EP4CE10F17C8N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE6F17C8L | EP4CE10F17C8N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Logic Elements / Cells | 6,272 | — |
| Number of CLBs | 392 | — |
| Number of Logic Elements / Cells | 6,272 | — |
| Total RAM Bits | 270,000 | — |
| Number of I/O | 179 max | — |
| Number of Gates | [DATA_NEEDED: gate count for EP4CE6] | — |
| Voltage - Supply | 1.0 V core, 2.5 V / 3.3 V I/O | — |
| Temperature na Operasyon | 0C to +85C (commercial, L grade) | 0C to +85C (Commercial) |
| Speed Grade | C8 (commercial speed grade 8) | — |
| Packhaging / Kaso | 256-LBGA, 17 x 17 mm, 1.0 mm pitch (F17) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Number of LABs/CLBs | 392 | — |
| Embedded Multipliers (18x18) | 15 | 23 |
| PLLs | 4 | 4 |
| Configuration Memory | External (EPCS / EPCQ serial flash) | — |
| Level ng MSL | 3 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Family | — | Cyclone IV E |
| Logic Elements (LEs) | — | 10320 |
| Embedded Memory | — | 423936 bits (414 Kbit) |
| Maximum User I/Os | — | 179 |
| Core Voltage (VCCINT) | — | 1.15 V to 1.25 V |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V |
| Maximum Internal Frequency | — | 402 MHz |
| Process Technology | — | 60 nm low-power SRAM |
| Packhaging | — | 256-FBGA (F17), 17x17 mm |
| Configuration Method | — | SRAM, requires external EPCS/EPCQ flash |