EP4CGX50CF23C7 vs EP4CGX50DF23C7N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CGX50CF23C7 sa pamamagitan ng Intel at EP4CGX50DF23C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CGX50CF23C7 EP4CGX50DF23C7N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone IV GX Cyclone IV GX
Logic Elements 49,888 49,888
Logic Cells 49,888 —
Embedded Memory Bits 2,562,048 bits —
Embedded Memory Blocks M9K blocks, 9 Kbit each —
Maximum User I/O 290 —
Packhaging 484-FBGA (F23) 484-ball FBGA (Plastic BGA, S-PBGA-B484, 23x23 mm)
Ball Pitch 1.0 mm —
Core Voltage 1.2 V —
Process Technology 60 nm 60 nm
Temperature Grade Commercial (0C to +85C) —
Speed Grade C7 —
Transceivers Integrated (Cyclone IV GX) Up to 8 channels, 3.125 Gbps
DSP Blocks 18x18 hardware multipliers —
Tindminan RoHS Compliant Compliant (Pb-free variant)
Uri ng Pagpapasok Surface Mount (FBGA) Surface Mount
Configurable Logic Blocks (CLBs) — 3,118
Total RAM Bits — 2,432 Kbit (≈ 304 KB)
Embedded 18x18 Multipliers — 66
PLLs — 2
Global Clock Networks — 8 (with up to 16 clock pins per region)
Number of I/O Pins — 290
Core Supply Voltage (VCCINT) — 1.15 V to 1.25 V (nominal 1.2 V)
Temperature na Operasyon — 0 °C to 85 °C (commercial)
Configuration Modes — Passive Serial (PS), Active Serial (AS), JTAG
Supported Memory Interfaces — DDR2 SDRAM, QDRII SRAM, RLDRAM II
Level ng MSL — 3 (168 hours)

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