EPF10K100EFC484-3 vs EPF10K100EFC484-3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPF10K100EFC484-3 sa pamamagitan ng Altera at EPF10K100EFC484-3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EPF10K100EFC484-3 | EPF10K100EFC484-3N |
|---|---|---|
| Brand | Altera | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Family | FLEX 10KE | FLEX 10KE |
| Typical Gates | 100,000 | — |
| Maximum System Gates | 158,000 | — |
| Logic Elements | 4,992 | — |
| Logic Array Blocks (LABs) | 624 | 624 |
| Embedded Memory (EAB RAM) | 49,152 bits | — |
| User I/O Pins | 338 | — |
| Speed Grade | -3 (fastest commercial) | -3 (fastest commercial bin) |
| Packhaging | 484-ball FineLine BGA | 484-ball FineLine BGA (FC484 / FBGA-484) |
| Temperature na Operasyon | 0C to +70C (Commercial) | — |
| Core Voltage | 2.5 V | — |
| I/O Standards Supported | 2.5V / 3.3V / 5.0V (PCI-compliant) | — |
| JTAG Support | IEEE Std. 1149.1-1990 BST | — |
| Configuration Method | SRAM (volatile, requires configuration device) | SRAM (external EPROM/Flash/JTAG required at power-up) |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Logic Elements / Cells | — | 4992 |
| Total Gates | — | 100,000 |
| Embedded Memory (EAB) | — | 49,152 bits (12 EABs) |
| User I/Os | — | 338 |
| Process Technology | — | 0.22 µm CMOS |
| Core Voltage (VCCINT) | — | 2.5 V |
| I/O Voltage (VCCIO) | — | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) |
| Internal Performance | — | 200 MHz |
| Temperature Grade | — | Commercial (0 °C to +70 °C) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free) |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |