EPF10K130EFC484-3 vs EPF10K100EFC484-3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPF10K130EFC484-3 sa pamamagitan ng Intel at EPF10K100EFC484-3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EPF10K130EFC484-3 | EPF10K100EFC484-3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Obsolete |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements (LEs) | 6,656 | — |
| Typical Gate Count | 130,000 system gates | — |
| Logic Array Blocks (LABs) | 832 | 624 |
| Embedded Memory (EABs) | 16 x 4,096 bits (65,536 bits total) | — |
| Maximum User I/O | 369 | — |
| Supply Voltage (Core) | 3.3 V | — |
| I/O Voltage Support | 5.0 V / 3.3 V / 2.5 V (multi-volt I/O) | — |
| Propagation Delay | 0.6 ns (per LE) | — |
| Speed Grade | -3 | -3 (fastest commercial bin) |
| Temperature na Operasyon | 0 C to +70 C (commercial) | — |
| Packhaging | 484-pin FBGA (FineLine BGA) | 484-ball FineLine BGA (FC484 / FBGA-484) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Configuration Method | SRAM-based, serial or parallel, requires external configuration device | SRAM (external EPROM/Flash/JTAG required at power-up) |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Logic Family | CMOS (SRAM-based) | — |
| Logic Elements / Cells | — | 4992 |
| Total Gates | — | 100,000 |
| Embedded Memory (EAB) | — | 49,152 bits (12 EABs) |
| User I/Os | — | 338 |
| Process Technology | — | 0.22 µm CMOS |
| Core Voltage (VCCINT) | — | 2.5 V |
| I/O Voltage (VCCIO) | — | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) |
| Internal Performance | — | 200 MHz |
| Temperature Grade | — | Commercial (0 °C to +70 °C) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free) |