EPF6010ATC100-3N vs EPF6010ANTC100-3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPF6010ATC100-3N sa pamamagitan ng Intel at EPF6010ANTC100-3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel
EPF6010ATC100-3N ⚠ Huling PagbiliIntel
EPF6010ANTC100-3 - FLEX 6000 FPGA 880 LE 71 I/O 100-TQFP | Intel
EPF6010ANTC100-3 ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | EPF6010ATC100-3N | EPF6010ANTC100-3 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | Huling Pagbili |
| Family | FLEX 6000 | FLEX 6000 |
| Logic Elements / Cells | 880 | — |
| Equivalent Gate Count | 10,000 gates | — |
| Logic Array Blocks (LABs) | 88 | — |
| User I/Os | 71 | — |
| Supply Voltage (Operating) | 3.0 V to 3.6 V | — |
| Maximum Internal Frequency | 142.86 MHz | — |
| Process Technology | 0.42 µm CMOS | 0.42 µm CMOS SRAM |
| Speed Grade | -3 | -3 |
| Packhaging | 100-pin TQFP (14 x 14 x 1.4 mm) | 100-TQFP |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0 °C to +70 °C (commercial) | — |
| Programming Method | In-system SRAM via ByteBlaster/BitBlaster | — |
| Level ng MSL | 3 (168 hours) | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Logic Elements | — | 880 LE |
| User I/O Count | — | 71 |
| Embedded Memory | — | 16000 bit |
| Number of Logic Array Blocks (LABs) | — | 8 |
| Core Voltage | — | 5 V |
| Configuration Interface | — | JTAG (IEEE 1149.1) / Serial / Parallel |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| I/O Standards Supported | — | LVTTL, LVCMOS, PCI (MultiVolt I/O) |
| Programmable Interconnect | — | Continuous FastTrack |