FDP86363-F085 vs IRFB3207ZPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng FDP86363-F085 sa pamamagitan ng onsemi at IRFB3207ZPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
onsemi
FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi
FDP86363-F085 ⚠ Huling Pagbili
Pagsanggunian na paghahambing
| Parametro | FDP86363-F085 | IRFB3207ZPBF |
|---|---|---|
| Brand | onsemi | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Huling Pagbili | Aktibo |
| Drain-Source Voltage (V(BR)DSS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25C | 110 A | 120 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: single-pulse IDM rating] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance Rds(on) at Vgs=10V | 2.8 mOhm typical | — |
| On-Resistance Rds(on) max at Vgs=10V | [DATA_NEEDED: max Rds(on) at Vgs=10V] | — |
| Gate Threshold Voltage Vgs(th) | [DATA_NEEDED: Vgs(th) min/typ/max] | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Junction-to-Case Thermal Resistance RthetaJC | 0.5 C/W | — |
| Junction-to-Ambient Thermal Resistance RthetaJA | 62.5 C/W (on 1 in^2 pad of 2oz copper per datasheet) | — |
| Hanay ng Temperature ng Junction na Operasyon | -55C to +175C | — |
| Package Type | TO-220-3 (TO-220AB) | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Polarity / Channel Type | N-Channel | — |
| Technology | PowerTrench (shielded-gate trench) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free / Halogen-Free | [DATA_NEEDED: explicit halogen-free claim] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Silicon-Limited Drain Current | — | 170 A |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Packhaging | — | TO-220AB (3-lead through-hole) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Level ng MSL | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |