H5AN4G8NBJR-UHI vs H5AN4G8NBJR-UHC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-UHI sa pamamagitan ng SK hynix at H5AN4G8NBJR-UHC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-UHI | H5AN4G8NBJR-UHC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasyon | 512M x 8 | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Packhaging | FBGA-78 (78-ball fine-pitch BGA) | TFBGA-78 (11 x 7.5 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| Rate ng Data | 2400 MT/s | 2400 Mbps (PC2400) |
| Interface | JEDEC DDR4 SDRAM | DDR4 (JEDEC) |
| Bank Architecture | DDR4 bank group architecture | — |
| Refresh | Self-refresh and auto-refresh support | [DATA_NEEDED: refresh rate 1x/2x/4x support] |
| Termination | On-die termination (ODT) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Latensya ng CAS | [DATA_NEEDED: CAS latency at DDR4-2400] | [DATA_NEEDED: CAS latency for -UHC speed bin] |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (Rohs Code: Yes) |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Volte ng Pagbibigay | — | 1.2 V |
| Technology | — | CMOS DRAM |
| Lifecycle Code | — | Active |
| REACH Compliance | — | Compliant |
| Manufacturer | — | SK Hynix Inc. |