H5AN4G8NBJR-UHI vs H5AN4G8NBJR-VKIR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-UHI sa pamamagitan ng SK hynix at H5AN4G8NBJR-VKIR sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-UHI | H5AN4G8NBJR-VKIR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasyon | 512M x 8 | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Packhaging | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| Rate ng Data | 2400 MT/s | 2666 Mbps per pin |
| Interface | JEDEC DDR4 SDRAM | — |
| Bank Architecture | DDR4 bank group architecture | — |
| Refresh | Self-refresh and auto-refresh support | [DATA_NEEDED: refresh interval specification] |
| Termination | On-die termination (ODT) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency at DDR4-2400] | [DATA_NEEDED: CAS latency] |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Operating Temperature (Industrial) | — | -40C to +85C (case) |
| Extended Temperature Range | — | +85C to +95C (case, per datasheet conditions) |
| Technology | — | CMOS DRAM |
| Product Family | — | H5AN4G4/6/8NBJR series |
| Speed Grade Code | — | -VKI |
| Packing Suffix | — | R (Tape & Reel) |
| VPP Supply | — | [DATA_NEEDED: VPP supply voltage] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |