H5AN8G8NAFR-PBC vs H5AN8G8NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NAFR-PBC sa pamamagitan ng SK hynix at H5AN8G8NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NAFR-PBC | H5AN8G8NAFR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasyon | 1G x 8 | 1G x 8 (x8) |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-78 | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Interface | DDR4 (double data rate, synchronized to clock) | DDR4 (Double Data Rate 4) |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) | — |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) | — |
| Process Technology | CMOS | — |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | Yes |
| Tindminan RoHS | Compliant | Compliant |
| Datasheet Revision | Rev. 1.2 / July 2017 | Rev. 1.2 / Jul. 2017 |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Rate ng Data | — | 2666 MT/s (per -R speed grade suffix) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |