H5AN8G8NAFR-PBC vs H5AN8G8NAFR-RDC 比較

詳細並排比較 H5AN8G8NAFR-PBC 由 SK hynix 與 H5AN8G8NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G8NAFR-PBC H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC ✓ 啟用中
SK hynix
H5AN8G8NAFR-RDC H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC ✓ 啟用中

規格比較

參數 H5AN8G8NAFR-PBC H5AN8G8NAFR-RDC
品牌 SK hynix SK hynix
類別 DRAM Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gbit
組織 1G x 8 1G x 8 (x8)
供應電壓 1.2 V —
封裝 FBGA-78 78-ball FBGA
安裝類型 Surface Mount Surface Mount
Speed Grade / Data Rate [DATA_NEEDED: speed grade / data rate] —
介面 DDR4 (double data rate, synchronized to clock) DDR4 (Double Data Rate 4)
Address Inputs A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) —
Connectivity Test Mode TEN (optional input on x4/x8, required on x16) —
Process Technology CMOS —
Lead-Free Yes Yes
無鹵素 Yes Yes
RoHS 狀態 Compliant Compliant
Datasheet Revision Rev. 1.2 / July 2017 Rev. 1.2 / Jul. 2017
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature range]
Speed Grade — -RDC (DDR4-2666 class)
資料速率 — 2666 MT/s (per -R speed grade suffix)
Core Supply Voltage (VDD) — 1.2 V
I/O Supply Voltage (VDDQ) — 1.2 V
Wordline Supply (VPP) — 2.5 V
Banks / Bank Groups — 16 banks / 4 bank groups (DDR4 8Gb architecture)
Burst Length — 8 (BL8)
CAS 延遲 — [DATA_NEEDED: CAS Latency]

資料表與資源

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