H5AN8G8NAFR-UHCR vs H5AN8G8NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NAFR-UHCR sa pamamagitan ng SK hynix at H5AN8G8NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NAFR-UHCR | H5AN8G8NAFR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organisasyon | 1G x 8 | 1G x 8 (x8) |
| Rate ng Data | 2400 Mbps/pin (PC2400) | 2666 MT/s (per -R speed grade suffix) |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface | CMOS, synchronous DDR4 | DDR4 (Double Data Rate 4) |
| Packhaging | FBGA-78 (PBGA78) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packing Suffix | R = Tape & Reel | — |
| Speed Grade Code | -UH | — |
| Generation Family | H5AN8GxNAFR-xxC (DDR4) | — |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Application Class | Main memory / high bandwidth | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency (CL)] | [DATA_NEEDED: CAS Latency] |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |