H5ANAG6NCJR-XN vs H5ANAG6NCMR-XNC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG6NCJR-XN sa pamamagitan ng SK hynix at H5ANAG6NCMR-XNC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG6NCJR-XN | H5ANAG6NCMR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $95.16 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (Volatile DRAM) |
| Density | 16 Gbit (1G x 16) | — |
| Organisasyon | 1G x 16 | — |
| Rate ng Data | 3200 Mbps/pin (DDR4-3200) | 3200 Mbps/pin |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| Packhaging | FBGA-96 (96-ball) | FBGA-96 |
| Package Width | 8 mm | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC (Command/Address) | Yes | — |
| Write Leveling | Yes | — |
| Maximum Standby Current | 0.074 A (per Vyrian listing) | — |
| Tindminan RoHS | Compliant | RoHS Compliant |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for -XN speed grade] | [DATA_NEEDED: CAS latency at 3200] |
| Laki ng Memory | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Technology | — | CMOS |
| Power Class | — | Normal Power |
| Interface | — | Parallel |
| Speed Grade | — | XN (3200) |
| Product Status | — | Active |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |