H5ANAG6NCR-PBC vs H5ANAG6NBJR-UHC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG6NCR-PBC sa pamamagitan ng SK hynix at H5ANAG6NBJR-UHC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG6NCR-PBC | H5ANAG6NBJR-UHC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16Gb (2GB) | 4 Gb |
| Organisasyon | x16 (1G x 16) | 256M x 16 |
| Volte ng Pagbibigay | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Transfer Rate | 3200 Mbps (family, per XNCR datasheet; PBC speed grade [DATA_NEEDED: exact speed grade Mbps]) | — |
| Packhaging | FBGA-96 | PBGA96 / FBGA-96 (TFBGA) |
| Number of Terminals | 96 balls | — |
| Temperature na Operasyon | 0C to 85C | -40C to +95C |
| Uri ng Pagpapasok | Surface Mount | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | Supported |
| Data Mask | Yes | Supported (DM function) |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | Supported |
| CRC Function | Yes | — |
| Write Leveling | Yes | Supported |
| Tindminan RoHS | Compliant | RoHS Compliant |
| Maximum Standby Current | [DATA_NEEDED: maximum standby current for PBC speed grade] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for PBC speed grade] | [DATA_NEEDED: CAS Latency] |
| Interface | — | DDR4 (CMOS) |
| Package Dimensions | — | 13 mm length (per JESD-30 R-PBGA-B96) |
| Access Mode | — | Multi Bank, Page Burst |
| Refresh | — | Auto / Self Refresh |
| On-Chip Termination | — | Dynamic ODT |
| CRC | — | Supported |
| Supply Voltage Class | — | DDR4 (1.2 V class) |
| REACH Compliance | — | Compliant |
| ECCN | — | EAR99 |
| HTS Code | — | 8542.32.00.36 |
| Max Data Rate | — | [DATA_NEEDED: Max Data Rate] |