H5ANAG8NBJR-RDC vs H5AN8G6NCJR-RDC Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NBJR-RDC sa pamamagitan ng SK hynix at H5AN8G6NCJR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Nakahanda
SK hynix
H5AN8G6NCJR-RDC H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix

H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix

H5AN8G6NCJR-RDC ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro H5ANAG8NBJR-RDC H5AN8G6NCJR-RDC
Brand SK hynix SK hynix
Kategorya DRAM Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock — In Stock
Presyo ng Yunit (USD) — $19.69
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
Organisasyon 2G x 8 512M x 16
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
Interface SSTL12 —
Speed Grade (suffix R) DDR4-2666 class —
Packhaging 78-ball FBGA —
Uri ng Pagpapasok Surface Mount Surface Mount
Refresh Self-refresh and auto-refresh (8K/64ms class per family datasheet) —
Bank Groups 4 (per 16Gb DDR4 family datasheet) —
Data Strobe DQS with read/write training —
Data Bus Inversion Supported (DBI) —
Latensya ng CAS [DATA_NEEDED: CAS Latency] —
Temperature na Operasyon [DATA_NEEDED: Operating Temperature Range] —
Tindminan RoHS Compliant (lead-free PBGA per family product data) Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet)
Katayuan ng Lifecycle Active —
Memory Density — 8 Gb (8589934592 bit)
Technology — CMOS
Package Code — TFBGA (PBGA96)
Package Shape — Rectangular
Number of Terminals — 96
Temperature Grade — OTHER
Data Rate Family — [DATA_NEEDED: specific speed grade Mbps]
Supply Voltage Class — [DATA_NEEDED: nominal VDD per datasheet speed bin]
Hanay ng Temperature na Operasyon — [DATA_NEEDED: min/max C per -RDC bin]
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask Function — Yes
Write Leveling — Yes
CRC — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita