H5ANAG8NBJR-RDC vs H5AN8G6NCJR-RDC 比較
詳細並排比較 H5ANAG8NBJR-RDC 由 SK hynix 與 H5AN8G6NCJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG8NBJR-RDC | H5AN8G6NCJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $19.69 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| 組織 | 2G x 8 | 512M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 介面 | SSTL12 | — |
| Speed Grade (suffix R) | DDR4-2666 class | — |
| 封裝 | 78-ball FBGA | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) | — |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) | — |
| Data Strobe | DQS with read/write training | — |
| Data Bus Inversion | Supported (DBI) | — |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | — |
| RoHS 狀態 | Compliant (lead-free PBGA per family product data) | Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet) |
| 生命週期狀態 | Active | — |
| Memory Density | — | 8 Gb (8589934592 bit) |
| Technology | — | CMOS |
| Package Code | — | TFBGA (PBGA96) |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER |
| Data Rate Family | — | [DATA_NEEDED: specific speed grade Mbps] |
| Supply Voltage Class | — | [DATA_NEEDED: nominal VDD per datasheet speed bin] |
| 工作溫度範圍 | — | [DATA_NEEDED: min/max C per -RDC bin] |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling | — | Yes |
| CRC | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |