H5ANAG8NCJR-XNC vs H5ANAG6NCJR-XN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NCJR-XNC sa pamamagitan ng SK hynix at H5ANAG6NCJR-XN sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG8NCJR-XNC | H5ANAG6NCJR-XN |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit (1G x 16) |
| Organisasyon | 2G x 8 | 1G x 16 |
| Rate ng Data | 3200 MT/s (DDR4-3200) | 3200 Mbps/pin (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V |
| Packhaging | FBGA-78 (7.5 x 11 mm) | FBGA-96 (96-ball) |
| Temperature na Operasyon | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Process Node | 1z nm (non-EUV) | — |
| Die Bit Density | 0.296 Gb/mm2 | — |
| Peak Bandwidth (per 64-bit channel) | 25.6 GB/s at DDR4-3200 | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Tindminan RoHS | Compliant | Compliant |
| Base Part Number Family | H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) | — |
| Speed Grade Suffix | -XNC (0~95C commercial) | — |
| Package Width | — | 8 mm |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC (Command/Address) | — | Yes |
| Write Leveling | — | Yes |
| Maximum Standby Current | — | 0.074 A (per Vyrian listing) |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency for -XN speed grade] |