H5ANAG8NCJR-XNC vs H5ANAG8NCMR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NCJR-XNC sa pamamagitan ng SK hynix at H5ANAG8NCMR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG8NCJR-XNC | H5ANAG8NCMR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $65.63 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| Organisasyon | 2G x 8 | — |
| Rate ng Data | 3200 MT/s (DDR4-3200) | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Packhaging | FBGA-78 (7.5 x 11 mm) | FBGA-78 |
| Temperature na Operasyon | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Node | 1z nm (non-EUV) | — |
| Die Bit Density | 0.296 Gb/mm2 | — |
| Peak Bandwidth (per 64-bit channel) | 25.6 GB/s at DDR4-3200 | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Base Part Number Family | H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) | — |
| Speed Grade Suffix | -XNC (0~95C commercial) | — |
| Laki ng Memory | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade | — | VK (per SK hynix speed-bin suffix) |
| Power Class | — | Normal Power |
| Bank Groups | — | 4 |
| Banks Total | — | 16 |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency for VK speed bin] |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |
| Manufacturer Process | — | CMOS DRAM |