H5TC4G63MFR-PBA vs H5TC4G63CFR-PBL Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63MFR-PBA sa pamamagitan ng SK hynix at H5TC4G63CFR-PBL sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63MFR-PBA | H5TC4G63CFR-PBL |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasyon | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | 1600 Mbps (PC3L-12800) |
| Packhaging | 96-ball FBGA | 96-ball FBGA (TFBGA) |
| Number of Banks | 8 | 8 |
| Burst Length | BL8, BL4 (with burst chop) | 8 |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Laki ng Memory | — | 4 Gb (256M x 16) |
| Volte ng Pagbibigay | — | 1.35 V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| Terminal Form | — | BALL |
| Latensya ng CAS | — | 11, 12, 13 |
| Refresh Period | — | 7.8 us at 85C |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |