IAUC100N04S6N015ATMA1 vs IPLU300N04S41R1XTMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N04S6N015ATMA1 sa pamamagitan ng Infineon at IPLU300N04S41R1XTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6N015ATMA1 ✓ NakahandaInfineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC100N04S6N015ATMA1 | IPLU300N04S41R1XTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | — |
| Technology | N-Channel Trench MOSFET | OptiMOS (Trench MOSFET) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A | — |
| Power Dissipation (P_D @ T_C=25C) | 100 W | — |
| R_DS(on) max @ V_GS=10V | 1.5 mΩ (typical, per Infineon product page) | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction, typical) | — |
| Packhaging | PG-TDSON-8 (SSO8) 5x6 mm | PG-HSOF-8-1 (8-PowerSFN, surface mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited floor life) | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Compliance | Compliant | Yes (Green Product) |
| Lead-Free | Yes | Yes (100% lead-free) |
| Part Number | — | IPLU300N04S41R1XTMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 A |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 W |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | — | 1.15 mΩ |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | — | 151 nC |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | — | 12,090 pF |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| Temperature ng Junction na Operasyon | — | 175 °C |
| Peak Reflow Temperature (AEC-Q) | — | 260 °C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Configuration | — | Single with built-in diode |
| Packing | — | Tape & Reel (TR) |