IAUC100N08S5N043ATMA1 vs IAUC50N08S5L096ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N08S5N043ATMA1 sa pamamagitan ng Infineon at IAUC50N08S5L096ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 ✓ Nakahanda
Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC100N08S5N043ATMA1 IAUC50N08S5L096ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Series IAUC / OptiMOS 5 —
Uri ng Transistor N-Channel MOSFET (Enhancement Mode) —
Maximum Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 100 A (package limited) —
Continuous Drain Current (chip-limited) 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W —
Maximum R<sub>DS(on)</sub> 4.3 mΩ —
Maximum Power Dissipation (P<sub>D</sub>) 125 W (T<sub>C</sub>) —
Hanay ng Temperature na Operasyon -55°C to +175°C -55°C to +175°C
Packhaging PG-TDSON-8-34 (SuperSO8) PG-TDSON-8-33 (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 8 —
Level ng Sensitivity sa Asid ng Moisture (MSL) MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Rating 100% Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Technology OptiMOS 5 (Trench) —
Channel Mode Enhancement —
Product Series — OptiMOS 5
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) — 50 A (Tc)
Pulsed Drain Current (IDM) — 200 A
On-Resistance (RDS(on)) — 9.6 mΩ max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) — 60 W (Tc)
Tindminan RoHS — Compliant
Lead-Free — Yes
Level ng MSL — [DATA_NEEDED: MSL level]

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