IAUC120N04S6L005ATMA1 vs IAUC120N06S5L032ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC120N04S6L005ATMA1 sa pamamagitan ng Infineon at IAUC120N06S5L032ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC120N04S6L005ATMA1 IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon

IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon

IAUC120N04S6L005ATMA1 ✓ Nakahanda
Infineon
IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC120N04S6L005ATMA1 IAUC120N06S5L032ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUC120N04S6L005ATMA1 —
Technology OptiMOS 6, N-Channel Trench MOSFET OptiMOS 5 Trench
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C) 120 A (Tj) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
Power Dissipation (PD, Tc=25°C) 187 W —
RDS(on) max at VGS=10 V 0.55 mΩ at 60 A —
RDS(on) max at VGS=4.5 V 0.85 mΩ —
Gate-Source Voltage (VGS) ±16 V —
Gate Threshold Voltage (VGS(th)) 2 V —
Total Gate Charge (Qg) 177 nC at VGS=10 V —
Input Capacitance (Ciss) 11.203 nF at 25 V —
Output Capacitance (Coss) 2.982 nF —
Reverse Transfer Capacitance (Crss) 175 pF —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-TDSON-8-53 (5x6 mm) PG-TDSON-8-34 (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Tindminan RoHS Compliant Compliant
Product Family — OptiMOS 5 (60 V)
Uri ng Transistor — N-Channel, Enhancement Mode
Drain-to-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D, T_j) — 120 A
R_DS(on) Max (V_GS = 10 V) — 3.2 mOhm
Power Dissipation (P_D, T_C = 25 C) — 94 W
Hanay ng Temperature na Operasyon — -55 C to +175 C (T_j)
AEC-Q101 Qualified — Yes
Level ng MSL — [DATA_NEEDED: MSL rating]
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge Q_G — [DATA_NEEDED: Q_G total at V_GS=10V]

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