IAUC60N04S6L030HATMA1 vs IAUC50N08S5N102ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC60N04S6L030HATMA1 sa pamamagitan ng Infineon at IAUC50N08S5N102ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ NakahandaInfineon
IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon
IAUC50N08S5N102ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC60N04S6L030HATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | [DATA_NEEDED: VGS(th) typical value] |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 5 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 50 A |
| On-Resistance (RDS(on)) | — | 10.2 mΩ @ 25 A, 10 V |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) | — | 21 nC @ 10 V |
| Input Capacitance (Ciss) | — | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25°C | — | 60 W |
| Hanay ng Temperature na Operasyon | — | -55°C to +175°C |
| Packhaging / Kaso | — | PG-TDSON-8-33 |
| Qualification | — | AEC-Q101 |