IAUC60N04S6N031HATMA1 vs IAUC120N04S6L012ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC60N04S6N031HATMA1 sa pamamagitan ng Infineon at IAUC120N04S6L012ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ NakahandaInfineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC60N04S6N031HATMA1 | IAUC120N04S6L012ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | OptiMOS 6 40V |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (Tj) | -55 °C to +175 °C (junction) |
| Packhaging | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| On-State Resistance (RDS(on)) at 10V VGS | — | 1.2 mΩ (typ) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at 20V VGS] |
| Power Dissipation (PD) at TC | — | 115 W |
| Delivery Form | — | Tape & Reel |