IAUCN04S6N009TATMA1 vs IAUC60N04S6N044ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S6N009TATMA1 sa pamamagitan ng Infineon at IAUC60N04S6N044ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 ✓ NakahandaInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S6N009TATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 40 V | — |
| Part Number | IAUCN04S6N009T | — |
| Ordering Code (MPN) | IAUCN04S6N009TATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, at Tj) | 330 A | — |
| Power Dissipation (PD, at Tc) | 178 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Packhaging | PG-LHDSO-10-2 (SSO10T) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS-6 N-channel trench MOSFET |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / RoHS | Yes / Compliant | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| Level ng MSL | — | 1 (unlimited) |
| Tindminan RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |