IAUCN04S6N009TATMA1 vs IAUC60N04S6N044ATMA1 مقایسه
مقایسه دقیق کنار به کنار IAUCN04S6N009TATMA1 توسط Infineon و IAUC60N04S6N044ATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Infineon
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 ✓ فعالInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ فعالمقایسه مشخصات
| پارامتر | IAUCN04S6N009TATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 40 V | — |
| Part Number | IAUCN04S6N009T | — |
| Ordering Code (MPN) | IAUCN04S6N009TATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, at Tj) | 330 A | — |
| Power Dissipation (PD, at Tc) | 178 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| بسته‌بندی | PG-LHDSO-10-2 (SSO10T) | PG-TDSON-8 (5x6 mm) with exposed pad |
| نوع نصب | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS-6 N-channel trench MOSFET |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / RoHS | Yes / Compliant | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| دمای اتصال کاری | — | -55°C to +175°C |
| سطح MSL | — | 1 (unlimited) |
| وضعیت RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |