IAUCN04S7N015GATMA1 vs IAUCN04S7L042GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N015GATMA1 sa pamamagitan ng Infineon at IAUCN04S7L042GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN04S7N015GATMA1 IAUCN04S7L042GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7 40V
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 165 A (Tc) —
Power Dissipation (P_D) 96 W (Tc) —
R_DS(on) max 1.53 mΩ at V_GS=10 V —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Packhaging PG-THSOG-4-1 (SSO4G 5x6) surface mount PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Temperature ng Junction na Operasyon -55C to +175C —
Automotive Qualification AEC-Q101 qualified —
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
Tindminan RoHS Compliant Compliant
Uri ng Pagpapasok Surface Mount (IMS-compatible source-down) Surface Mount (IMS substrate / FR4 with thermal vias)
Level ng MSL 1 (per JEDEC J-STD-020) 1
Technology — Trench N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Hanay ng Temperature na Operasyon — -55C to +175C (Tj)
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita