IAUCN10S5L110TATMA1 vs IAUCN10S7L290TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN10S5L110TATMA1 sa pamamagitan ng Infineon at IAUCN10S7L290TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ NakahandaInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN10S5L110TATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET, Trench, Logic Level | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) at Tc | 88 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Packhaging | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (260°C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | 100% Avalanche Tested | Yes |
| Automotive Qualification | AEC-Q101 Extended Qualification | AEC-Q100 qualified |
| Tindminan RoHS | Compliant | — |
| Product Family | — | OptiMOS™ 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |