IAUCN10S5L110TATMA1 vs IAUCN10S7L290TATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUCN10S5L110TATMA1 tarafından Infineon ve IAUCN10S7L290TATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ AktifInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUCN10S5L110TATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET, Trench, Logic Level | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) at Tc | 88 W | — |
| İşletim Jant Sıcaklığı | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Paket | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | MSL1 (260°C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | 100% Avalanche Tested | Yes |
| Automotive Qualification | AEC-Q101 Extended Qualification | AEC-Q100 qualified |
| RoHS Durumu | Compliant | — |
| Product Family | — | OptiMOS™ 7 |
| Transistor Türü | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |