IAUZ40N06S5L050ATMA1 vs BSC146N10LS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUZ40N06S5L050ATMA1 sa pamamagitan ng Infineon at BSC146N10LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IAUZ40N06S5L050ATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | [DATA_NEEDED: continuous drain current at Tc=25C] | — |
| Drain Current at T<sub>j</sub> | 90 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 µA | — |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 71 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TSDSON-8-33 (TSDSON-8) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) | OptiMOS 5 (logic-level) |
| Automotive Qualification | AEC-Q100 qualified | — |
| Tindminan RoHS | Compliant | Compliant |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 44 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (typ. ~1.7 V) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C (TJ max) |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS] |