IAUZ40N06S5L050ATMA1 vs IAUZ30N10S5L240ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUZ40N06S5L050ATMA1 sa pamamagitan ng Infineon at IAUZ30N10S5L240ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ NakahandaInfineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUZ40N06S5L050ATMA1 | IAUZ30N10S5L240ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | [DATA_NEEDED: continuous drain current at Tc=25C] | — |
| Drain Current at T<sub>j</sub> | 90 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 µA | — |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 71 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TSDSON-8-33 (TSDSON-8) | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) | OptiMOS 5 (trench) |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Tindminan RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| R_DS(on) max at V_GS=10V | — | 24 mΩ |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Charge (Q_g) typ | — | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | — | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | — | 45.5 W |
| Hanay ng Temperature na Operasyon | — | -55°C to +175°C (junction, automotive grade) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |