IAUZ40N08S5N100ATMA1 vs IAUZ40N06S5L050ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUZ40N08S5N100ATMA1 sa pamamagitan ng Infineon at IAUZ40N06S5L050ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 ✓ NakahandaInfineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUZ40N08S5N100ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS-5 N-Channel MOSFET | OptiMOS 5 (super-junction N-channel) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 40 A | — |
| Power Dissipation (PD, Tc=25°C) | 68 W | — |
| On-Resistance RDS(on) max | 10 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V | — |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V | — |
| Gate-Source Voltage VGS max | ±20 V | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | — |
| Packhaging | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm | PG-TSDSON-8-33 (TSDSON-8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| Tindminan RoHS | Compliant | Compliant |
| Channel Type | N-Channel | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | — | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | — | 5 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | — | 6.4 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 2.2 V at 29 µA |
| Total Gate Charge Q<sub>G</sub> | — | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 71 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |