IAUZN10S7L289ATMA1 vs IAUCN10S7L290TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUZN10S7L289ATMA1 sa pamamagitan ng Infineon at IAUCN10S7L290TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUZN10S7L289ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | OptiMOS™ 7 |
| Technology | Trench MOSFET (N-Channel) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tj) | 27 A | — |
| Power Dissipation (Ptot, Tc=25°C) | 45 W | — |
| On-State Resistance (RDS(on), max, VGS=10V) | 28.9 mΩ | — |
| Packhaging | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Grade | AEC-Q100 qualified (Automotive MOSFET) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typical] |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (Tj) | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | — |
| Bilang ng Pin | 8 | — |
| RoHS Compliance | Yes | Compliant |
| Uri ng Transistor | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q100 qualified |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |