IGLD60R070D1AUMA3 vs GAN111-650WSB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IGLD60R070D1AUMA3 sa pamamagitan ng Infineon at GAN111-650WSB sa pamamagitan ng Nexperia. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IGLD60R070D1AUMA3 - 600V 70mΩ CoolGaN™ eMode GaN FET | Infineon
IGLD60R070D1AUMA3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IGLD60R070D1AUMA3 | GAN111-650WSB |
|---|---|---|
| Brand | Infineon | Nexperia |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | GaN HEMT (enhancement-mode, normally-off) | GaN HEMT H2 (cascode, normally-off) |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| Continuous Drain Current (ID, Tc) | 15 A | — |
| Power Dissipation (PD, Tc) | 114 W | — |
| On-Resistance (RDS(on)) | 70 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss] | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) | — |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) | — |
| Packhaging | PG-LSON-8-1 (LSON-8 with exposed pad) | TO-247 (SOT429) through-hole, 3-lead |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Level ng MSL | 3 | — |
| Wala sa Halogen | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Operating Temperature (Tj) | [DATA_NEEDED: Tj max] | — |
| Series | CoolGaN™ | — |
| Polarity | N-Channel | — |
| Packaging | Tape & Reel | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | Nexperia |
| On-Resistance RDS(on) (typ) | — | 97 mΩ |
| Continuous Drain Current (ID, at Ta) | — | 21 A |
| Power Dissipation (PD, at Ta) | — | 107 W |
| Polarity / Channel Type | — | N-Channel |
| Configuration | — | Single FET |
| Gate Drive Compatibility | — | Standard silicon MOSFET gate drive (0-12 V typical) |
| Operating Mode | — | Normally-off (cascode) |
| Target Applications | — | SMPS, PFC, OBC, solar inverter, industrial drives |
| Orderable Part Suffix | — | WSBQ (tape-and-reel/ammopack) |