IGLD60R070D1AUMA3 vs GAN111-650WSB 比較
詳細並排比較 IGLD60R070D1AUMA3 由 Infineon 與 GAN111-650WSB 由 Nexperia. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IGLD60R070D1AUMA3 | GAN111-650WSB |
|---|---|---|
| 品牌 | Infineon | Nexperia |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | GaN HEMT (enhancement-mode, normally-off) | GaN HEMT H2 (cascode, normally-off) |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| Continuous Drain Current (ID, Tc) | 15 A | — |
| Power Dissipation (PD, Tc) | 114 W | — |
| On-Resistance (RDS(on)) | 70 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss] | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) | — |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) | — |
| 封裝 | PG-LSON-8-1 (LSON-8 with exposed pad) | TO-247 (SOT429) through-hole, 3-lead |
| 安裝類型 | Surface Mount | Through Hole |
| MSL 等級 | 3 | — |
| 無鹵素 | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Operating Temperature (Tj) | [DATA_NEEDED: Tj max] | — |
| Series | CoolGaN™ | — |
| Polarity | N-Channel | — |
| Packaging | Tape & Reel | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | Nexperia |
| On-Resistance RDS(on) (typ) | — | 97 mΩ |
| Continuous Drain Current (ID, at Ta) | — | 21 A |
| Power Dissipation (PD, at Ta) | — | 107 W |
| Polarity / Channel Type | — | N-Channel |
| Configuration | — | Single FET |
| Gate Drive Compatibility | — | Standard silicon MOSFET gate drive (0-12 V typical) |
| Operating Mode | — | Normally-off (cascode) |
| Target Applications | — | SMPS, PFC, OBC, solar inverter, industrial drives |
| Orderable Part Suffix | — | WSBQ (tape-and-reel/ammopack) |