IGLD60R070D1AUMA3 vs GAN111-650WSB Karşılaştırma

Ayrıntılı yan yana karşılaştırma IGLD60R070D1AUMA3 tarafından Infineon ve GAN111-650WSB tarafından NexperiaAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Nexperia
GAN111-650WSB GAN111-650WSB - 650V 97mΩ GaN FET TO-247 | Nexperia

GAN111-650WSB - 650V 97mΩ GaN FET TO-247 | Nexperia

GAN111-650WSB ✓ Aktif

Özellik Karşılaştırması

Parametre IGLD60R070D1AUMA3 GAN111-650WSB
Marka Infineon Nexperia
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Technology GaN HEMT (enhancement-mode, normally-off) GaN HEMT H2 (cascode, normally-off)
Drain-Source Voltage (VDS) 600 V 650 V
Continuous Drain Current (ID, Tc) 15 A —
Power Dissipation (PD, Tc) 114 W —
On-Resistance (RDS(on)) 70 mΩ (typical, VGS = 10 V) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Output Charge (Qoss) [DATA_NEEDED: Qoss] —
Reverse Recovery Charge (Qrr) Near zero (GaN technology) —
Input Capacitance (Ciss) 380 pF @ 400 V (per Utmel) —
Paket PG-LSON-8-1 (LSON-8 with exposed pad) TO-247 (SOT429) through-hole, 3-lead
Montaj Türü Surface Mount Through Hole
MSL Seviyesi 3 —
Klorürsüz Yes —
RoHS Durumu Compliant Compliant
Operating Temperature (Tj) [DATA_NEEDED: Tj max] —
Series CoolGaN™ —
Polarity N-Channel —
Packaging Tape & Reel —
Factory Pack Quantity 3000 —
Manufacturer — Nexperia
On-Resistance RDS(on) (typ) — 97 mΩ
Continuous Drain Current (ID, at Ta) — 21 A
Power Dissipation (PD, at Ta) — 107 W
Polarity / Channel Type — N-Channel
Configuration — Single FET
Gate Drive Compatibility — Standard silicon MOSFET gate drive (0-12 V typical)
Operating Mode — Normally-off (cascode)
Target Applications — SMPS, PFC, OBC, solar inverter, industrial drives
Orderable Part Suffix — WSBQ (tape-and-reel/ammopack)

Dökümanlar & Kaynaklar

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