IPB100N04S4H2ATMA1 vs IPC100N04S5L1R5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB100N04S4H2ATMA1 sa pamamagitan ng Infineon at IPC100N04S5L1R5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ NakahandaInfineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB100N04S4H2ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ] |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Packhaging | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8-34 (SS08 leadless) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260C peak reflow) | MSL1 (260C peak reflow) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| AEC-Q101 Qualified | — | Yes |
| Tindminan RoHS | — | Compliant (Green Product) |
| Avalanche Tested | — | 100% |