IPB17N25S3100ATMA1 vs IAUZ30N06S5L140ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB17N25S3100ATMA1 sa pamamagitan ng Infineon at IAUZ30N06S5L140ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
IAUZ30N06S5L140ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB17N25S3100ATMA1 | IAUZ30N06S5L140ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB17N25S3100ATMA1 | — |
| Uri ng Transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 250 V | 60 V |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 64 A | — |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V | — |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | 2.2 V (typ) |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V | 12.2 nC @ VGS=10 V |
| Input Capacitance (Ciss) | 1.5 nF | — |
| Output Capacitance (Coss) | 23 pF | 888 pF @ VDS=30 V |
| Reverse Transfer Capacitance (Crss) | 625 pF | — |
| Power Dissipation (PD) | 107 W at Tc = 25 C | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TO263-3-2 (D2PAK-2) | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Tindminan RoHS | Compliant (Green Product) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 30 A (Tj) |
| Power Dissipation (PD, Tc) | — | 33 W |
| RDS(on) Max @ VGS=10 V | — | 14 mΩ |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| Technology Family | — | OptiMOS 5 |
| Automotive Grade | — | AEC-Q101 qualified |
| Gate-Source Voltage Max | — | ±20 V |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |