IPC100N04S51R7ATMA1 vs IPB100N04S4H2ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPC100N04S51R7ATMA1 sa pamamagitan ng Infineon at IPB100N04S4H2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPC100N04S51R7ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-5 | — |
| Uri ng Transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | -55C to +175C |
| Packhaging | PG-TDSON-8-34 (SS08 leadless) | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (260 °C peak reflow) | MSL1 (up to 260C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| Tindminan RoHS | Compliant (Green Product) | — |
| Built-in Body Diode | Yes | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant (Green Product) |